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Home MOSFET RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA)

RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA)

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10
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Overview

Quick Details
  • Part Number:
  • JANSR2N7425
  • Package:
  • DIP
  • Manufacturer:
  • International Rectifier
  • D/C:
  • 1404
  • Place of Origin:
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Product Description

RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) 


100V, P-CHANNEL REF: MIL-PRF-19500/660 RAD-Hard HEXFET TECHNOLOGY 




Features 


• Single Event Effect (SEE) Hardened 

• Identical Pre- and Post-Electrical Test Conditions 

• Low RDS(on) 

• Repetitive Avalanche Ratings 

• Dynamic dv/dt Ratings 

• Simple Drive Requirements 

• Ease of Paralleling 

• Hermetically Sealed 

• Electrically Isolated 

• Ceramic Package 

• Light Weight 

• ESD Rating: Class 3A per MIL-STD-750, Method 1020 

Pre-Irradiation 




Description 


IRHM9160 is part of the International Rectifier HiRel family of products. IR HiRel RAD-Hard HEXFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stab仆ity of electrical parameters. 





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