REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTOR
SINGLE EVENT EFFECT (SEE) RAD HARD
400 Volt, 0.20n, (SEE) RAD HARD HEXFET International Rectifier's (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure.Add巾onally, under identical pre- and post-radiation test cond几ions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliab仆ity in the industry.
RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
Radiation Hardened up to 1 x 105 Rads (Si) Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened
Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
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