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Home MOSFET REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTOR

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTOR

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1
Quantity:
10
Port:
Shenzhen PORT
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Overview

Quick Details
  • Part Number:
  • ANSR2N7391
  • Package:
  • DIP
  • Manufacturer:
  • International Rectifier
  • D/C:
  • 1427
  • Place of Origin:
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Product Description

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTOR 


IRHM7360SE

 JANSR2N7391 

[REF:MIL-PRF-195000/TBD] 

N-CHANNEL 

SINGLE EVENT EFFECT (SEE) RAD HARD 



400 Volt, 0.20n, (SEE) RAD HARD HEXFET International Rectifier's (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure.Add巾onally, under identical pre- and post-radiation test cond几ions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliab仆ity in the industry. 


RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. 


Features: 


Radiation Hardened up to 1 x 105 Rads (Si) Single Event Burnout (SEB) Hardened 


Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened 


Neutron Tolerant 


Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating 


Dynamic dv/dt Rating 


Simple Drive Requirements 


Ease of Paralleling 


Hermetically Sealed 


Electrically Isolated 


Ceramic Eyelets 


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